Integrated Gallium Nitride Nonlinear Photonics

Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and refractive index contrast, GaN-on-insulator (GaNOI) is also promising platform for nonlinear optical applications. Despite intriguing proprieties, applications of GaN have rarely studied due the relatively loss waveguides (2 dB/cm). In this letter, we report GaNOI microresonator with intrinsic quality factor over 2 million, corresponding an 0.26 dB/cm. Parametric oscillation threshold power low 8.8 mW demonstrated, experimentally extracted at telecom wavelengths estimated be n2 = 1.2*10 -18 m2W-1, which comparable silicon. Single soliton generation implemented by auxiliary laser pumping scheme, so mitigate thermorefractive effect GaN. The large index, together broadband transparency window make most balanced chip-scale